RU6888R 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Shenzhen ruichips Semicon RU6888R
- Power Dissipation (Pd): 130W
- Drain Source Voltage (Vdss): 68V
- Continuous Drain Current (Id): 88A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,35A
- Package: TO-220
- Manufacturer: Shenzhen ruichips Semicon